How photodetector technology is transforming industries

Exploring the evolution of photodetector technology, including challenges and best practices for current and future applications.

The evolution of photodetectors is a multifaceted journey. These devices, adept at converting light into electrical signals, have transformed and continue to shape the future of many industries. The evolution from traditional photodiodes to state-of-the-art quantum dot sensors and everything in between highlights their specialized applications across diverse domains.

The growth and evolution of photodetectors started with military investments and defense needs. During the Cold War, significant advancements in low-light detection technologies were driven by military needs, particularly for heightened surveillance and communication systems. Technologies such as the avalanche photodiode (APD), first patented by Jun-ichi Nishizawa in 1952, were heavily researched in the 1960s and 1970s and were pivotal in advancing photodetector capabilities. Post-Cold War, these technologies transitioned into civilian applications, leading to widespread industrial and consumer adoption.

Best practices for innovating with photodetector technologies

The types of photodetectors vary based on the material used, the operational mechanism, and their application-specific properties. These devices range from basic PN junction photodiodes to advanced technologies like avalanche photodiodes (APDs) and quantum dot photodetectors. Other types include photomultiplier tubes (PMTs), charge-coupled devices (CCDs), metal-semiconductor-metal (MSM) photodetectors, and emerging materials like graphene-based photodetectors. Each type has distinct characteristics, making them suitable for a variety of applications, including telecommunications, autonomous systems, medical imaging, environmental monitoring, industrial scanners and consumer electronics. It’s imperative to begin any design and engineering process by understanding what the application needs and asking all the questions upfront during the planning stage.


Some key considerations are:

  • Spectral range and materials: Spectral range is the range of wavelengths over which the photodetector is sensitive, typically measured in nanometers (nm). The below image shows some of the photodetector materials that are used to detect signals ranging from UV wavelengths to Long Wave Infrared (LWIR) wavelengths. With the longstanding evolution of photodetector technologies, many materials for components currently in use may be outdated compared to new advancements. Development of compounds like Silicon carbide (SiC), Gallium nitride (GaN), indium gallium arsenide (InGaAs), and other semiconductor materials like InGaAsSb have enhanced photodetectors’ sensitivity and spectral range. These materials detect short-wave infrared (SWIR) and middle-wave infrared (MWIR), increasing their versatility. Organic, graphene-based and flexible photodetectors expand possibilities for wearable technology and biomedical applications.
Commonly used photodetectors and their corresponding wavelength sensitivity ranges. (Image: Author.)
  • Quantum efficiency (QE): Quantum efficiency is the ratio of the number of charge carriers generated to the number of incident photons, often expressed as a percentage.
  • Detectivity (D*): Detectivity is a normalized measure of a photodetector’s sensitivity, expressed in Jones (cm·Hz^1/2/W). It combines responsivity and noise characteristics. Responsivity measures the electrical output per unit of optical input power, typically expressed in amperes per watt (A/W) or volts per watt (V/W).
  • Noise: A constant consideration with sensitive components is its bulk noise, which is a combination of the shot and Johnson noise of the detector and often is derived from the dark current of the detector. Noise equivalent power (NEP) is the amount of optical power required to generate a signal equal to the noise level of the photodetector, typically measured in watts per root hertz (W/√Hz).
  • Device architecture: A photodetector’s architecture, including the active area, the device thickness, and the composition of each layer impacts its efficiency, capacitance and response time. Advanced designs that incorporate specialized epitaxial layering, such as heterostructures and quantum wells, can enhance performance. Pixel configuration for imaging applications is critical. Higher pixel density can improve resolution, while larger pixels may enhance sensitivity.
  • Speed and response time: Response time is the time it takes for a photodetector to respond to an optical signal, typically measured in nanoseconds (ns) or picoseconds (ps). This impacts the detectivity of photodetectors. Innovations in materials with high electron mobility have lowered capacitance, increasing the bandwidth (Hz) of photodetectors.
  • Integration: Close collaboration with end-users and industry partners helps to develop photodetectors that meet the precise needs of various applications. Hybrid integration of photodetectors with other components, like receiver systems, leads to more efficient and scalable solutions, improving performance while broadening their application scope.
  • Reliability, durability and robustness: Developing photodetectors that can withstand extreme conditions, such as extreme temperatures, mechanical stress and radiation, has expanded their use in military, aerospace and industrial applications. This goes hand in hand with thermal management and packaging. Advances in coatings and packaging techniques have demonstrated improved photodetector reliability.
  • Costs and resource: Costs and resources naturally impact all decision-making and capabilities for investing in growing photodetector technologies. Photonic integrated circuits allow for compact, high-performance systems that are cost-effective. Advances in nanofabrication have allowed for the creation of smaller, more efficient photodetectors. Developing photodetectors compatible with other high-volume semiconductor manufacturing process technologies like complementary metal-oxide-semiconductor (CMOS) facilitates the production of affordable, high-performance sensors.  

Photodetector engineers can balance heightened specialization with optimized approaches for success, scalability and future growth by having these conversations on the front end. It’s important to balance overall best practices with the application’s specific standards and certifications, especially for consumer, automotive, aerospace, defense and medical industries.

Photodetector technology supplements and revolutionizes many applications

Today, photodetector technology is a vital component that underpins countless technologies, including gas sensing, motion sensors and consumer electronics. In telecommunications, it enables high-speed data transmission in fiber optic networks. In aerospace and defense, they’re used for target recognition and range finding; in R&D, there’s a wide range of spectroscopy applications. Their 3D scanning applications are essential in architecture, construction, autonomous vehicles and industrial controls. Photodetectors also enable environmental monitoring to detect pollutants and monitor environmental changes.  Photodetectors are also pivotal in medical imaging and are used in devices like CT scanners and MRI machines for precise imaging and remote patient monitoring technologies.

Photodetector evolution comes with growth challenges

Acknowledging common industry pain points from the beginning positions engineers and organizations with the information they need to address and mitigate challenges. The photonics industry is small, requiring talent to collaborate frequently within and across disciplines. Having dedicated foundries for photodetectors may not be financially viable. As a result, partnership is vital for meeting the technical demands of development. Universities and research entities stand at the forefront of evolution.

Systems integration presents another challenge, given unique applications and the need for collaboration within photonics technologies. This demands a clear understanding of the product, environment and objectives which is especially critical for custom, application-specific developments.

Optimizing size, weight, power and cost (SWaP-C) is a paramount concern for the design and development of photodetector technology. Investments and specially dedicated resources are essential to future-proof designs for growth and innovation while offering a competitive edge for organizations in nearly every industry.

The future of photodetector technology is bright

Growth and innovation in applying photodetector technology will undoubtedly continue over time. As this technology becomes more widespread, its success is showcased by how little individuals notice the impact on their everyday lives. The seamless integration of photodetectors into various applications is a testament to their efficiency and effectiveness. Knowing what to expect is essential to harnessing the benefits and opportunities of this next wave of innovation. Advancements in materials, quantum photonics, AI integration and sustainable technologies promise to enhance performance, efficiency and cost-effectiveness, driving innovation in autonomous systems, security, medical diagnostics, environmental monitoring, consumer electronics and beyond. As organizations continue to develop and integrate these technologies, there’s no denying the widespread potential for photodetectors to address complex global challenges and improve everyday life. The future holds exciting possibilities, with these advancements seamlessly blending into the fabric of our daily experiences.

Written by

Arshey Patadia

Arshey Patadia is a seasoned expert in photonics with more than 12 years of experience in developing award-winning products with global impact. He holds a master’s degree in materials science and engineering from Carnegie Mellon University and has developed silicon, germanium, and InGaAs-based photodetectors. Arshey has also worked on emitters, lead salts, InAs, and other III-V SWIR/MWIR detectors. He has four U.S. patents, more than 20 published papers, and serves as an editor for several industry and academic publications. Arshey was a judge at the 2024 Regeneron International Science and Engineering Fair, the world’s largest science fair. For more information, contact arshey.patadia@asu.edu or connect with Arshey on LinkedIn.