Electronics Weekly – RS Components LEDs, Samsung Silicon Electronics & More
Vincent Charbonneau posted on June 01, 2018 |

Analog Devices Radio Frequency ADC

Radio Frequency ADC. (Image courtesy of Analog Devices.)
Radio Frequency ADC. (Image courtesy of Analog Devices.)

Analog Devices introduced a radio frequency (RF) analog-to-digital converter (ADC) that provides greater speed and bandwidth. The AD9213 features higher parametric performance, increased Nyquist bandwidth and RF sampling capabilities at higher analog input frequencies than conventional RF ADCs, allowing for the digitization of RF signals up to 7 GHz.

The device helps electronic test and measurement manufacturers generate increased levels of performance in time-domain applications, such as digital oscilloscopes and spectroscopy/chemical analysis. The wider Nyquist bandwidth also allows satellite communications developers to design products with increased bandwidth.

For more information, visit Analog Devices’ website.

Maxim Buck Converters

(Image courtesy of Maxim.)
(Image courtesy of Maxim.)

Maxim launched the pin-compatible MAX20073 and MAX20074 buck converters. The converters, which provide low EMI (electromagnetic interference) performance for low-voltage point-of-load applications, are suited for automotive infotainment and ADAS applications.

Combined with Maxim’s spread spectrum oscillator, SYNC IN functionality, forced pulse-width-modulation (PWM), skip modes and current-mode architecture, system quality and performance of devices using the buck converters can be improved. Additionally, backend point-of-load (POL) buck converters, such as the MAX20073/MAX20074, send specific voltages to the many power rails that come with adding modern features.

Additional technical specifications are available on Maxim’s website.

Microsemi Three-Phase Vienna PFC Reference Design

Three-Phase Vienna PFC reference design. (Image courtesy of Microsemi.)
Three-Phase Vienna PFC reference design. (Image courtesy of Microsemi.)

Microsemi announced the availability of its scalable 30-kilowatt, three-phase Vienna power factor correction (PFC) topology reference design featuring its Silicon Carbide (SiC) diodes and MOSFETS. Developed in collaboration with North Carolina State University, the scalable system is ideal for fast electric vehicle charging and other automotive and industrial applications.

The reference design includes a detailed 3D mechanical and thermal design with an integrated fan and cooling channel to reduce thermal resistance and total system size. Its printed circuit board (PCB) layout was developed with considerations for safety, current stress, mechanical stress and noise immunity. The reference design package features ready-to-use hardware and verified open source software to reduce the technical risk of high-power switching designs.

For more information, visit Microsemi’s website.

RS Components COB LEDs

Luxeon Gen-4 COB LEDs. (Image courtesy of RS Components.)
Luxeon Gen-4 COB LEDs. (Image courtesy of RS Components.)

RS Components released the Lumileds Gen-4 Luxeon COB LEDs. The LEDs feature efficacy of up to 170lm/W, four times lower package thermal resistance and color consistency within a three-step MacAdam ellipse, simplifying component purchasing and luminaire production while ensuring uniform appearance from unit to unit.

High color fidelity is another strong suit of the Gen-4 Luxeon COB LEDs, which have a color rendering index (CRI) of up to 90. Consistent rendering of all wavelengths makes them ideal for color-critical lighting in areas such as retail displays, showrooms, healthcare centers, laboratories and industrial inspection areas.

Information concerning pricing and availability can be found on RS Components’ website.

Samsung Silicon Electronics

(Image courtesy of Samsung.)
(Image courtesy of Samsung.)

Samsung announced a series of silicon electronics intended for high-performance computing and connected systems. The line of devices includes 3nm process nodes with gate-all-around (GAA) device architecture. To overcome the physical scaling and performance limitations of the fin field-effect transistor (FinFET) architecture, Samsung is developing a MBCFETTM (multi-bridge-channel FET) technology that uses a nanosheet device. By enhancing the gate control, the performance of 3nm nodes will be improved.

In addition, the use of verified FinFET technology will be extended to the 4nm process. As the last generation of FinFET, 4nm provides a smaller cell size, increased performance and faster ramp-up to the stable level of yield by adopting 5LPE, supporting easy migration.

For more information, visit Samsung’s website.

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